发明名称 |
Semiconductor device with ultra thin silicide layer |
摘要 |
A manufacturing method of a semiconductor device comprises the following steps. First, a substrate is provided, at least one fin structure is formed on the substrate, and a metal layer is then deposited on the fin structure to form a salicide layer. After depositing the metal layer, the metal layer is removed but no RTP is performed before the metal layer is removed. Then a RTP is performed after the metal layer is removed. |
申请公布号 |
US8766319(B2) |
申请公布日期 |
2014.07.01 |
申请号 |
US201213456238 |
申请日期 |
2012.04.26 |
申请人 |
United Microelectronics Corp. |
发明人 |
Lai Kuo-Chih;Hsu Chia Chang;Ho Nien-Ting;Liao Bor-Shyang;Huang Shu Min;Cheng Min-Chung;Yang Yu-Ru |
分类号 |
H01L31/0328;H01L31/0336;H01L31/072;H01L31/109 |
主分类号 |
H01L31/0328 |
代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
主权项 |
1. A semiconductor device, comprising:
a substrate, with a plurality of fin structures on the substrate; a silicide layer deposited on a surface and two sidewalls of each fin structure, wherein the thickness of the silicide layer is uniform; and the thickness of the silicide layer is between 2-4 nanometers; and a plurality of slot contacts, each slot contact disposed on a plurality of fin structures. |
地址 |
Science-Based Industrial Park, Hsin-Chu TW |