| 摘要 |
<p>The present invention relates to a driver of a semiconductor memory device. The present invention is a technology for reducing the unnecessary leakage current of a driver circuit of the semiconductor memory device. The present invention includes a driving control unit which selectively supplies a first voltage and a second voltage with different levels to a first node in response to a power down signal; an input driving unit which selectively outputs a voltage applied from the first node in response to a decoding signal; and an output driving unit which is driven according to the output voltage of the input driving unit.</p> |
