Permeation barrier for encapsulation of devices and substrates

摘要

A permeation barrier film structure for organic electronic devices includes one or more bilayers having a hybrid permeation barrier composition. Each of the one or more bilayers includes a first region having a first composition corresponding to a first CF4—O2 Plasma Reactive Ion Etch Rate and a second region having a second composition corresponding to a second CF4—O2 Plasma Reactive Ion Etch Rate, wherein the second Etch Rate is greater than the first Etch Rate by a factor greater than 1.2 and the hybrid permeation barrier film is a homogeneous mixture of a polymeric material and a non-polymeric material, wherein the mixture is created from a single precursor material.

主权项

1. A permeation barrier film structure for encapsulating an organic light emitting device, the permeation barrier film structure comprising:
a bilayer stack having a hybrid permeation barrier composition that comprises a homogeneous mixture of a polymeric material and a non-polymeric material, the bilayer stack comprising:
a first region directly deposited on the organic light emitting device, wherein the first region having a first composition that is a homogeneous mixture of a polymeric material and a non-polymeric material and having a first CF4—O2 Plasma Reactive Ion Etch Rate; anda second region deposited on the first region, wherein the second region having a second composition that is a homogeneous mixture of said polymeric material and said non-polymeric material and having a second CF4—O2 Plasma Reactive Ion Etch Rate, wherein the second CF4—O2 Plasma Reactive Ion Etch Rate is greater than the first CF4—O2 Plasma Reactive Ion Etch Rate by a factor greater than 1.2, wherein the first region having a maximum thickness of 1000 nm ±10 nm.