High Voltage Device with Reduced Leakage

摘要

A semiconductor device is provided which includes a semiconductor substrate, a gate structure formed on the substrate, sidewall spacers formed on each side of the gate structure, a source and a drain formed in the substrate on either side of the gate structure, the source and drain having a first type of conductivity, a lightly doped region formed in the substrate and aligned with a side of the gate structure, the lightly doped region having the first type of conductivity, and a barrier region formed in the substrate and adjacent the drain. The barrier region is formed by doping a dopant of a second type of conductivity different from the first type of conductivity.

主权项

1. A method for fabricating a semiconductor device, comprising:
providing a semiconductor substrate; forming a first well in the semiconductor substrate, the first well having a first type of conductivity; forming a second well in the semiconductor substrate, the second well having a second type of conductivity different from the first type of conductivity; forming a gate structure on the semiconductor substrate, the gate structure having a first portion overlying the first well and a second portion overlying the second well; forming a barrier region in the first well, the barrier region being formed by doping a dopant of the second type of conductivity; and forming a source in the second well and a drain in the first well, the source and drain having the first type of conductivity, the drain being adjacent the barrier region.