| 发明名称 |
SWITCH CIRCUIT AND SPDT SWITCH CIRCUIT |
| 摘要 |
The present invention relates to a switch circuit and a single pole double throw (SPDT) circuit. The switch circuit includes: a MOS transistor transferring or blocking a signal according to a turn on/off operation thereof; a gate resistor connected to a gate of the MOS transistor; and a variable gate resistor circuit increasing a resistance value of the gate resistor when the MOS transistor is changed from a turn-off state to a turn-on state. |
| 申请公布号 |
US2014175901(A1) |
申请公布日期 |
2014.06.26 |
| 申请号 |
US201314140035 |
申请日期 |
2013.12.24 |
| 申请人 |
Samsung Electro-Mechanics Co., Ltd. |
发明人 |
CHOI Jae Hyouck;Park Sung Hwan |
| 分类号 |
H01H9/54 |
主分类号 |
H01H9/54 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A switch circuit comprising:
a metal oxide semiconductor (MOS) transistor transferring or blocking a signal according to a turn on/off operation thereof; a gate resistor connected to a gate of the MOS transistor; and a variable gate resistor circuit increasing a resistance value of the gate resistor when the MOS transistor is changed from a turn-off state to a turn-on state. |
| 地址 |
Suwon KR |
