HIGH EFFICIENCY LIGHT EMITTING DIODE

摘要

Disclosed is a high efficiency light emitting diode. The light emitting diode includes a semiconductor stack structure which includes a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode which is located on the semiconductor stack structure; and a graphene-meta material stack structure which is at least partly located between the first electrode and the semiconductor stack structure. Because the meta material is used, optical loss due to the first electrode is prevented, thereby increasing the optical efficiency of the light emitting diode.