发明名称 SEMICONDUCTOR DEVICE
摘要 In this flash memory, after first and second nodes are precharged to a power supply voltage, a sense amplifier is activated, and signals appearing at the first and second nodes are held in a register. With output signals of the register, a transistor is rendered conductive, so that a constant current source for offset compensation is connected to the first or second node. Accordingly, the offset voltage of the sense amplifier can be compensated for with a simple configuration.
申请公布号 US2014177341(A1) 申请公布日期 2014.06.26
申请号 US201314062782 申请日期 2013.10.24
申请人 KONO Takashi 发明人 KONO Takashi
分类号 G11C16/28 主分类号 G11C16/28
代理机构 代理人
主权项 1. A semiconductor device comprising: a precharge circuit precharging first and second nodes to a predetermined voltage; a sense amplifier amplifying a voltage between said first and second nodes to output a first or second signal; an offset detection circuit activating said sense amplifier after said first and second nodes are precharged to said predetermined voltage by said precharge circuit to detect an offset voltage of said sense amplifier based on an output signal of said sense amplifier, in an offset sense operation; and an offset compensation circuit changing a voltage of said first or second node precharged by said precharge circuit, based on a detection result of said offset detection circuit, to compensate for the offset voltage of said sense amplifier.
地址 Kawasak-shi JP