METAL SHIELD STRUCTURE AND METHODS FOR BSI IMAGE SENSORS

摘要

A backside illumination image sensor structure includes an image sensor which is adjacent to the first side of a semiconductor substrate. An interconnection layer is formed on the first side of the semiconductor substrate. A backside illumination film is formed on the second side of the semiconductor substrate. A metal shielding layer is formed on the backside illumination film. A via is buried in the backside illumination film and connects the metal shielding layer and the semiconductor substrate.