| 发明名称 |
TOPOLOGICAL INSULATOR STRUCTURE |
| 摘要 |
A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3. 0<x<1, 0<y<2. Values of x and y satisfies that an amount of a hole type charge carriers introduced by a doping with Cr is substantially equal to an amount of an electron type charge carriers introduced by a doping with Bi. The magnetically doped TI quantum well film is in 3 QL to 5 QL. |
| 申请公布号 |
US2014175373(A1) |
申请公布日期 |
2014.06.26 |
| 申请号 |
US201314055872 |
申请日期 |
2013.10.16 |
| 申请人 |
INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES ;TSINGHUA UNIVERSITY |
发明人 |
XUE QI-KUN;HE KE;MA XU-CUN;CHEN XI;WANG LI-LI;CHANG CUI-ZU;FENG XIAO;LI YAO-YI;JIA JIN-FENG |
| 分类号 |
H01L43/06 |
主分类号 |
H01L43/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A topological insulator structure, comprising:
an insulating substrate; and a magnetically doped topological insulator quantum well film located on the insulating substrate; wherein a material of the magnetically doped topological insulator quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3, wherein 0<x<1, 0<y<2, and values of x and y satisfies that an amount of a hole type charge carriers introduced by a doping with Cr is substantially equal to an amount of an electron type charge carriers introduced by a doping with Bi; and the magnetically doped topological insulator quantum well film is in a range of 3 QL thickness to 5 QL thickness. |
| 地址 |
Beijing CN |
