| 摘要 |
<p>A deep silicon etch method comprises: a deposition step (S101), generating a protection layer to protect an etch side wall; an etch step (S102), etching an etch bottom and the etch side wall; and repeating the deposition step (S101) and the etch step (S102) until the whole deep silicon etch process is finished; and further comprises a bottom smoothing step (S103), the bottom smoothing step (S103) being: performing plasma processing by using a fluoride gas to remove polymers generated on the etch bottom because of deposition, a process pressure used in the bottom smoothing step (S103) being less than a process pressure used in the etch step (S102), and the bottom smoothing step (S103) being performed at least once in the whole deep silicon etch process. By means of the deep silicon etch method, in the deep silicon etch process, polymers on the etch bottom are suppressed from gradually increasing, and micro masks or silicon grass is suppressed from generating, so as to improve an etch speed and a selection ratio of the deep silicon etch, and improve the roughness of the etch bottom.</p> |
