发明名称 |
SINGLE-ENDED SENSE AMPLIFIER CIRCUIT |
摘要 |
A single-ended sense amplifier and a method for reading a memory cell are disclosed. The method includes the following steps. A bit line is charged according to a control signal. Thereafter, whether the dropoff time of the bit line voltage is greater or less than a predetermined time is deteremined. When the dropoff time of the voltage of the bit line is less than the predetermined time period, a first operation is sensed. On the other hand, when the dropoff time of the voltage of the bit line is greater than the predetermined time period, a second operation is sensed. The dropoff time of the voltage of the bit line is determined according to a parasitic capacitance on the bit line. A logic level of a sensing transistor circuit is retained and an output data signal according to the operation sensed is generated. |
申请公布号 |
US2014177350(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
US201213726179 |
申请日期 |
2012.12.23 |
申请人 |
EMEMORY TECHNOLOGY INC. |
发明人 |
Chen Yung-Jui;Po Chen-Hao;Huang Chih-Hao |
分类号 |
G11C7/06;G11C7/12 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
1. A single-ended sense amplifier circuit, comprising:
a pre-charge circuit coupled to a bit line to charge the bit line according to a control signal; a sensing transistor circuit coupled to the bit line to read a memory cell; and a latch circuit coupled to the sensing transistor circuit to retain a logic level of the sensing transistor circuit and to generate an output data signal acccording to an operation sensed, wherein when a dropoff time of a voltage of the bit line is less than a predetermined time period, a first operation is sensed by the sensing transistor circuit, and when the dropoff time of the voltage of the bit line is greater than the predetermined time period, a second operation is sensed by the sensing transistor circuit, and the dropoff time of the voltage of the bit line is determined according to a parasitic capacitance on the bit line. |
地址 |
Hsinchu TW |