发明名称 |
Semiconductor Device and Manufacturing Method Thereof |
摘要 |
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an interlayer insulating film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks. |
申请公布号 |
US2014175444(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
US201414193597 |
申请日期 |
2014.02.28 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Yamazaki Shunpei;Arai Yasuyuki;Koyama Jun |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Kanagawa-ken JP |