| 摘要 |
<p>The present invention provides a spin transfer torque magnetic random access memory and a method for manufacturing the same. The spin transfer torque magnetic random access memory comprises a magnetic tunnel junction. The magnetic tunnel junction comprises: an antiferromagnetic layer disposed on a semiconductor substrate, a reference layer disposed on the antiferromagnetic layer, an insulation layer disposed on the reference layer, and a free layer disposed on the insulation layer. The free layer is disposed on a plane defined by a long axis direction and a short axis direction perpendicular to the long axis direction, and the free layer comprises a linear portion crossing the long axis direction.</p> |
