| 发明名称 | Method for making a sensor device using a graphene layer | ||
| 摘要 | A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The substrate is separated into at least two substrate pieces. | ||
| 申请公布号 | US8759153(B2) | 申请公布日期 | 2014.06.24 |
| 申请号 | US201113226173 | 申请日期 | 2011.09.06 |
| 申请人 | Infineon Technologies AG | 发明人 | Elian Klaus;Ruhl Guenther;Theuss Horst;Escher-Poeppel Irmgard |
| 分类号 | H01L21/44;H01L21/48;H01L21/50;H01L23/28;H01L23/00 | 主分类号 | H01L21/44 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method of manufacturing a sensor device, the method comprising: forming a graphene layer on a substrate as a sensor material; depositing a diffusion-selective plastic material on the graphene layer to at least partially cover the graphene layer, wherein a selectivity of the sensor device to different substances depends on diffusion of a substance through the diffusion-selective plastic material to the graphene layer; and thereafter separating the substrate into at least two single substrate pieces. | ||
| 地址 | Neubiberg DE | ||