Method to form a CMOS image sensor

摘要

The present disclosure relates to a method and composition to limit crystalline defects introduced in a semiconductor device during ion implantation. A high-temperature low dosage implant is performed utilizing a tri-layer photoresist which maintains the crystalline structure of the semiconductor device while limiting defect formation within the semiconductor device. The tri-layer photoresist comprises a layer of spin-on carbon deposited onto a substrate, a layer of silicon containing hard-mask formed above the layer of spin-on carbon, and a layer of photoresist formed above the layer of silicon containing hard-mask. A pattern formed in the layer of photoresist is sequentially transferred to the silicon containing hard-mask, then to the spin-on carbon, and defines an area of the substrate to be selectively implanted with ions.

主权项

1. A method of forming an image sensor device, comprising:
forming a tri-layer photoresist on a crystalline bulk substrate; patterning the tri-layer photoresist to define an opening through both a silicon-containing hard mask layer and a spin-on carbon layer of the tri-layer photoresist, wherein the opening exposes a surface of the crystalline bulk substrate therethrough; and implanting the crystalline bulk substrate with ions through the opening while the crystalline bulk substrate is at a temperature greater than room temperature and less than approximately 400° C.