发明名称 Horizontal interdigitated capacitor structure with vias
摘要 The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a surface that is defined by a first axis and a second axis perpendicular to the first axis; and a capacitor disposed on the substrate, the capacitor having an anode component that includes a plurality of first conductive features and a cathode component that includes a plurality of second conductive features. The first conductive features and the second conductive features each include two metal lines extending along the first axis. At least one metal via extending along a third axis that is perpendicular to the surface of the substrate and interconnecting the two metal lines. The first conductive features are interdigitated with the second conductive features along both the second axis and the third axis.
申请公布号 US8759893(B2) 申请公布日期 2014.06.24
申请号 US201113227242 申请日期 2011.09.07
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Cho Hsiu-Ying
分类号 H01L29/94;H01L29/66;H01L29/00;H01L21/02 主分类号 H01L29/94
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. A semiconductor device, comprising: a substrate having a surface that is defined by a first axis and a second axis perpendicular to the first axis; and a capacitor disposed on the substrate, the capacitor having an anode component that includes a plurality of first conductive features and a first side portion connecting with the first conductive features and a cathode component that includes a plurality of second conductive features and a second side portion connecting with the second conductive features, wherein the first conductive features and the second conductive features each include: two metal lines extending along the first axis, andat least one metal via extending along a third axis that is perpendicular to the surface of the substrate and interconnecting the two metal lines; the first conductive features are interdigitated with the second conductive features along both the second axis and the third axis; and the first side portion and the second side portion include: two conductive lines extending along the second axis; andat least one conductive via extending along the third axis and interconnecting the two conductive lines extending along the second axis.
地址 Hsin-Chu TW