发明名称 |
SEMICONDUCTOR DEVICE HAVING A RESISTOR ELECTRODE |
摘要 |
<p>Described is a semiconductor device which includes a transistor region and a resistance region. The transistor region includes an active region inside the substrate and a gate structure which is formed on the active region. The resistance region includes a base insulating layer on the surface of the substrate, and a resistance structure which is formed on the base insulating layer. The level of the upper surface of the gate structure is same as the level of the upper surface of the resistance structure.</p> |
申请公布号 |
KR20140077043(A) |
申请公布日期 |
2014.06.23 |
申请号 |
KR20120145746 |
申请日期 |
2012.12.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
XIONG JUNJIE;KIM, YOON HAE;KANG, HONG SEONG;LEE, YOON SEOK;CHOI, YOU SHIN |
分类号 |
H01L27/02;H01L21/336;H01L29/78 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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