发明名称 SEMICONDUCTOR DEVICE HAVING A RESISTOR ELECTRODE
摘要 <p>Described is a semiconductor device which includes a transistor region and a resistance region. The transistor region includes an active region inside the substrate and a gate structure which is formed on the active region. The resistance region includes a base insulating layer on the surface of the substrate, and a resistance structure which is formed on the base insulating layer. The level of the upper surface of the gate structure is same as the level of the upper surface of the resistance structure.</p>
申请公布号 KR20140077043(A) 申请公布日期 2014.06.23
申请号 KR20120145746 申请日期 2012.12.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 XIONG JUNJIE;KIM, YOON HAE;KANG, HONG SEONG;LEE, YOON SEOK;CHOI, YOU SHIN
分类号 H01L27/02;H01L21/336;H01L29/78 主分类号 H01L27/02
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