发明名称 WAFER MACHINING METHOD
摘要 Provided is a method for machining a wafer, which is capable of installing a resin film, such as an adhesion film for bonding a die, on the rear surfaces of individual devices divided by a lead dicing scheme without reduction of device quality. The wafer machining method divides a wafer including devices formed in plural areas divided by plural streets formed on a surface in a grid shape into individual devices according to the streets and installs resin films on rear surfaces of each device. The wafer machining method includes a dividing groove forming process of forming a dividing groove at a depth corresponding to a finishing thickness of a device from the surface of the wafer along the street; a protective member adhesion process of allowing a protective member to adhere to the surface of the wafer; a wafer dividing process of dividing the wafer into individual devices by presenting the dividing groove on the rear surface by grinding the rear surface of the wafer; a wafer supporting process of installing the resin film on the rear surface of the wafer and supporting a side of the resin film by the dicing tape installed on a frame having a ring shape; a protective member delaminating process of delaminating the protective member adhering to the surface of the wafer; and an etching process of generating plasma of etching gas used to etch the resin film installed on the rear surface of the water and allowing the etching gas plasma to permeate into the dividing groove to etch the resin film exposed in the dividing groove.
申请公布号 KR20140077106(A) 申请公布日期 2014.06.23
申请号 KR20130148585 申请日期 2013.12.02
申请人 DISCO CORPORATION 发明人 MATSUZAKI SAKAE;KAWAI AKIHITO;ARAI KAZUHISA
分类号 H01L21/78;H01L21/304;H01L21/3065;H01L21/50 主分类号 H01L21/78
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