NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT HAVING SUPERIOR LEAKAGE CURRENT BLOCKING EFFECT AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed are a nitride semiconductor light-emitting element and a method for manufacturing the same. The nitride semiconductor light-emitting element according to the present invention comprises: a current blocking part disposed between a substrate and an n-type nitride layer; an activation layer disposed on the top surface of the n-type nitride layer; and a p-type nitride layer disposed on the top surface of the activation layer, wherein the current blocking part is an AlxGa(1-x)N layer, and the Al content x times layer thickness (μm) is in the range of 0.01-0.06. Accordingly, the nitride semiconductor light-emitting element can increase the luminous efficiency by having a current blocking part which prevents current leakage from occurring.

主权项

1. A nitride semiconductor light emitting device comprising:
a current blocking part formed between a substrate and an n-type nitride layer; an activation layer formed on an upper surface of the n-type nitride layer; and a p-type nitride layer formed on an upper surface of the activation layer, wherein the current blocking part comprises an insulating material.