| 发明名称 |
P-AlGAN LAYER AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE |
| 摘要 |
A p-AlGaN layer doped with magnesium is provided that includes an aluminum composition ratio x of 0.2 or more and less than 0.5 and a carrier concentration of 2.5×1017/cm3 or more. A Group III nitride semiconductor light emitting device including the p-AlxGa1-xN layer is also provided. |
| 申请公布号 |
US2014166943(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201414185132 |
申请日期 |
2014.02.20 |
| 申请人 |
DOWA ELECTRONICS MATERIALS CO., LTD. |
发明人 |
OOSHIKA Yoshikazu;MATSUURA Tetsuya |
| 分类号 |
H01L33/32 |
主分类号 |
H01L33/32 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A p-AlGaN layer doped with magnesium, the p-AlGaN layer having an aluminum composition ratio x of 0.2 or more and less than 0.5 and a carrier concentration of 2.5×1017/cm3 or more.
|
| 地址 |
Tokyo JP |
