| 摘要 |
The present invention relates to a semiconductor device. The semiconductor device according to one embodiment of the present invention includes a first conductivity type middle layer; a first conductivity type recombination part which is formed on the middle layer; a second conductivity type anode layer which touches the upper part of the middle layer. According to one embodiment of the present invention, the concentration of the first conductivity type recombination part is higher than that of the middle layer. According to one embodiment of the present invention, the recombination part touches the anode layer. |
