| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide semiconductor device manufacturing method which improves semiconductor characteristics of an active layer region which is composed of an IGZO semiconductor.SOLUTION: An oxide semiconductor device manufacturing method of the present embodiment comprises a process of forming an active layer region of a TFT by manufacturing processes including: a process of spattering a target for IGZO semiconductor formation in a plasma atmosphere using a mixed gas of at least one of argon (Ar), helium (He) and neon (Ne) with oxygen (O2); and a process of spattering the target in a plasma atmosphere using a mixed gas of at least one of xenon (Xe) and krypton (Kr) with oxygen (O2). |
