CIRCUIT CONFIGURATION AND MANUFACTURING PROCESSES FOR VERTICAL TRANSIENT VOLTAGE SUPPRESSOR (TVS) AND EMI FILTER

摘要

A vertical TVS (VTVS) circuit includes a semiconductor substrate for supporting the VTVS device thereon having a heavily doped layer extending to the bottom of substrate. Deep trenches are provided for isolation between multi-channel VTVS. Trench gates are also provided for increasing the capacitance of VTVS with integrated EMI filter.

主权项

1. A vertical transient voltage suppressing (VTVS) device comprising:
a substrate comprising a heavily doped layer extending to a bottom surface of said substrate wherein said heavily doped layer comprising a dopant concentration of a first conductivity type higher than 1E18/cm3.