发明名称 METHOD OF FABRICATING SEMICONDUCTOR DEVICES HAVING VERTICAL CELLS
摘要 The present invention relates to a method for fabricating a semiconductor device having a vertical cell. The method for fabricating a semiconductor device having a vertical cell according to one embodiment of the present invention includes a step of preparing a substrate; a step of forming a preliminary stack structure; a step of removing an upper preliminary stack structure; a step of forming a mask; a step of forming a first pattern; a step of forming a second pattern; and a step of forming a sacrificial preliminary stack structure.
申请公布号 KR20140073933(A) 申请公布日期 2014.06.17
申请号 KR20120141980 申请日期 2012.12.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 OH, JUNG IK;JANG, DAE HYUN;SHIN, KYOUNG SUB
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
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