| 摘要 |
A cleaning composition of a semiconductor device for laminating an organosiloxane-based thin film and a photoresist layer in this order on a substrate having a low dielectric interlayer insulation film and a copper wiring or a copper alloy wiring, then applying selective exposure and development treatments to the subject photoresist layer to form a photoresist pattern, subsequently applying a dry etching treatment to the organosiloxane-based thin film and the low dielectric interlayer insulation film while using this resist pattern as a mask and then removing the organosiloxane-based thin film, a residue generated by the dry etching treatment, a modified photoresist having been modified by the dry etching treatment and an unmodified photoresist layer located in a lower layer than the modified photoresist, the cleaning composition containing from 15 to 20 % by mass of hydrogen peroxide, from 0.0001 to 0.003 % by mass of an amino polymethylene phosphonic acid, from 0.02 to 0.5 % by mass of potassium hydroxide and water and having a pH of from 7.5 to 8.5, is provided. Also, a method for manufacturing a semiconductor device using the subject cleaning composition is provided. |
