发明名称 |
RF MEMS ISOLATION, SERIES AND SHUNT DVC, AND SMALL MEMS |
摘要 |
The present invention generally relates to an architecture for isolating an RF MEMS device from a substrate and driving circuit, series and shunt DVC die architectures, and smaller MEMS arrays for high frequency communications. The semiconductor device has one or more cells with a plurality of MEMS devices therein. The MEMS device operates by applying an electrical bias to either a pull-up electrode or a pull-down electrode to move a switching element of the MEMS device between a first position spaced a first distance from an RF electrode and a second position spaced a second distance different than the first distance from the RF electrode. The pull-up and/or pull-off electrode may be coupled to a resistor to isolate the MEMS device from the substrate. |
申请公布号 |
KR20140073508(A) |
申请公布日期 |
2014.06.16 |
申请号 |
KR20147008073 |
申请日期 |
2012.08.31 |
申请人 |
CAVENDISH KINETICS, INC. |
发明人 |
GADDI ROBERTO;KNIPE RICHARD L.;VAN KAMPEN ROBERTUS PETRUS;UNAMUNO ANARTZ |
分类号 |
H01G5/18;H01G5/38;H01G5/40;H01H59/00 |
主分类号 |
H01G5/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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