METHOD AND APPARATUS FOR FORMING C/SiC FUNCTIONALLY GRADED COATING

摘要

According to an embodiment of the invention, provided is a method of forming a C/SiC functionally graded coating. In the embodiment, in a step of forming the C/SiC functionally graded coating, a reaction condition is controlled by feeding a larger amount of the oxygen gas at an early stage than a latter stage of the reaction so that a pure carbon film is formed on a surface of the substrate and then gradually decreasing the amount of the oxygen gas so that a SiC film having a higher concentration with an increasing distance from the surface of the substrate is formed.

主权项

1. A method of forming a C/SiC functionally graded coating, the method comprising the following steps of:
placing a substrate on which a C/SiC functionally graded coating is to be formed inside a reaction furnace in which the C/SiC functionally graded coating is formed; heating the reaction furnace, and forming the C/SiC functionally graded coating on the substrate by feeding a reactant gas containing carbon and silicon together with oxygen gas into the reaction furnace to thus cause a reaction between the reactant gas and the oxygen gas, wherein in the step of forming the C/SiC functionally graded coating, a reaction condition is controlled by feeding a larger amount of the oxygen gas at an early stage than a latter stage of the reaction so that a substantially pure carbon film is formed on a surface of the substrate and then gradually decreasing the amount of the oxygen gas so that a SiC film having a higher concentration with an increasing distance from the surface of the substrate is formed.