SEMICONDUCTOR PRESSURE SENSOR AND FABRICATION METHOD THEREOF

摘要

At a pressure sensor region, a pressure sensor including a fixed electrode, a void and a movable electrode is formed. At a CMOS region, a memory cell transistor and a field effect transistor are formed. An etching hole communicating with the void is closed by a first sealing film. The void is formed by removing a region of a film identical to the film of a gate electrode of the memory cell transistor. The movable electrode is formed of a film identical to the film of a gate electrode.

主权项

1. A semiconductor pressure sensor comprising:
a first region, a second region, and a third region defined at a surface of a semiconductor substrate, a pressure sensor formed at said first region, and including a fixed electrode, a void, and a movable electrode, said void located above said fixed electrode and said movable electrode located above said void, a memory cell transistor formed at said second region, and including a first electrode and a second electrode arranged above said first electrode as a gate electrode, a field effect transistor formed at said third region, and including a third electrode as another gate electrode, an interlayer insulation film formed so as to cover said pressure sensor, said memory cell transistor, and said field effect transistor, a hole formed at said interlayer insulation film, communicating with said void, a sealing portion sealing said void, and an opening formed at said interlayer insulation film, and open towards said pressure sensor, said void formed by removing a portion from a film identical to a conductor film qualified as said first electrode, said movable electrode formed of a film identical to another conductor film qualified as said second electrode and said third electrode.