发明名称 QUANTUM DOT PHOSPHOR FOR LIGHT EMITTING DIODE AND METHOD OF PREPARING THE SAME
摘要 Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.
申请公布号 US2014158979(A1) 申请公布日期 2014.06.12
申请号 US201414181500 申请日期 2014.02.14
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 JANG Eun Joo;KIM Mi Yang;KIM Hyung Kun;JUN Shin Ae;JIN Yong Wan;CHOI Seong Jae
分类号 H01L33/06 主分类号 H01L33/06
代理机构 代理人
主权项 1. A quantum dot phosphor, comprising: quantum dots; and a solid substrate on which the quantum dots are supported, wherein the quantum dots are disposed directly on an outer surface defining the solid substrate; wherein the solid substrate comprises an inorganic phosphor; wherein the quantum dot is a Group II-VI compound semiconductor nanocrystal or a mixture of the Group II-VI compound semiconductor nanocrystals, or is a Group III-V compound semiconductor nanocrystal or a mixture of the Group III-V compound semiconductor nanocrystals; and wherein the Group II-VI compound semiconductor nanocrystal is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, and HgTe, and the Group III-V compound semiconductor nanocrystal is selected from GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, and InAs.
地址 Suwon-si KR
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