发明名称 POWER SEMICONDUCTOR CIRCUIT DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 A power semiconductor circuit device and a method for manufacturing the same, both of which are provided with: a base board (12) on which at least a power semiconductor element (10) is mounted; a resin (15) which molds the base board and the power semiconductor element in a state where partial surfaces of the base board, including a base board surface opposite to a surface on which the power semiconductor element is mounted, are exposed; and a heat dissipating fin (16) joined to the base board by a pressing force. A groove (14) is formed in the base board (12) at a portion to be joined to the heat dissipating fin, and the heat dissipating fin (16) is joined by caulking to the groove (14).
申请公布号 EP2293328(A4) 申请公布日期 2014.06.11
申请号 EP20090762425 申请日期 2009.06.04
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 MITSUI TAKAO;YOSHIHARA HIROYUKI;KIMURA TORU;KIKUCHI MASAO;GOTO YOICHI
分类号 H01L23/31;H01L23/00;H01L23/367;H01L23/433;H01L23/495 主分类号 H01L23/31
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