发明名称 |
POWER SEMICONDUCTOR CIRCUIT DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A power semiconductor circuit device and a method for manufacturing the same, both of which are provided with: a base board (12) on which at least a power semiconductor element (10) is mounted; a resin (15) which molds the base board and the power semiconductor element in a state where partial surfaces of the base board, including a base board surface opposite to a surface on which the power semiconductor element is mounted, are exposed; and a heat dissipating fin (16) joined to the base board by a pressing force. A groove (14) is formed in the base board (12) at a portion to be joined to the heat dissipating fin, and the heat dissipating fin (16) is joined by caulking to the groove (14). |
申请公布号 |
EP2293328(A4) |
申请公布日期 |
2014.06.11 |
申请号 |
EP20090762425 |
申请日期 |
2009.06.04 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
MITSUI TAKAO;YOSHIHARA HIROYUKI;KIMURA TORU;KIKUCHI MASAO;GOTO YOICHI |
分类号 |
H01L23/31;H01L23/00;H01L23/367;H01L23/433;H01L23/495 |
主分类号 |
H01L23/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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