发明名称 Method for forming wires with narrow spacing
摘要 A method for forming wires with a narrow spacing is provided. The method includes the steps of: sequentially forming a first metal layer and a protective layer on a substrate; using a first photomask to pattern the first metal layer and the protective layer, so as to form a first metal line and a patterned protective layer thereon; forming a second metal layer on the substrate and the patterned protective layer; using a second photomask to pattern the second metal layer, so as to form a second metal line adjacent to the first metal line; and removing the patterned protective layer on the first metal line. According to the method, the wires can be located at the same layer with a narrow spacing, thereby avoiding a problem that the wires are easily broken.
申请公布号 US8748083(B2) 申请公布日期 2014.06.10
申请号 US201313737015 申请日期 2013.01.09
申请人 Chunghwa Picture Tubes, Ltd. 发明人 Hsu Han-tung
分类号 G03F7/26 主分类号 G03F7/26
代理机构 代理人
主权项 1. A method for forming wires with a narrow spacing, the method comprising steps of: sequentially forming a first metal layer and a protective layer on a substrate; using a first photomask to pattern the first metal layer and the protective layer, to form a first metal line and a patterned protective layer thereon; forming a second metal layer on the substrate and the patterned protective layer; using a second photomask to pattern the second metal layer, so as to form a second metal line adjacent to the first metal line; and removing the patterned protective layer on the first metal line; wherein the first metal line and the second metal line are formed to have a spacing between the first metal line and the second metal line, and the spacing is less than a minimal line spacing that can be reached in the patterning step, and wherein the spacing is less than 1.5 micrometers.
地址 Bade, Taoyuan TW