发明名称 |
Method for forming wires with narrow spacing |
摘要 |
A method for forming wires with a narrow spacing is provided. The method includes the steps of: sequentially forming a first metal layer and a protective layer on a substrate; using a first photomask to pattern the first metal layer and the protective layer, so as to form a first metal line and a patterned protective layer thereon; forming a second metal layer on the substrate and the patterned protective layer; using a second photomask to pattern the second metal layer, so as to form a second metal line adjacent to the first metal line; and removing the patterned protective layer on the first metal line. According to the method, the wires can be located at the same layer with a narrow spacing, thereby avoiding a problem that the wires are easily broken. |
申请公布号 |
US8748083(B2) |
申请公布日期 |
2014.06.10 |
申请号 |
US201313737015 |
申请日期 |
2013.01.09 |
申请人 |
Chunghwa Picture Tubes, Ltd. |
发明人 |
Hsu Han-tung |
分类号 |
G03F7/26 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming wires with a narrow spacing, the method comprising steps of:
sequentially forming a first metal layer and a protective layer on a substrate; using a first photomask to pattern the first metal layer and the protective layer, to form a first metal line and a patterned protective layer thereon; forming a second metal layer on the substrate and the patterned protective layer; using a second photomask to pattern the second metal layer, so as to form a second metal line adjacent to the first metal line; and removing the patterned protective layer on the first metal line; wherein the first metal line and the second metal line are formed to have a spacing between the first metal line and the second metal line, and the spacing is less than a minimal line spacing that can be reached in the patterning step, and wherein the spacing is less than 1.5 micrometers.
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地址 |
Bade, Taoyuan TW |