Method of p-type doping of cadmium telluride

摘要

A method of p-type doping cadmium telluride (CdTe) is disclosed. The method comprising the steps of, (a) providing a first component comprising cadmium telluride (CdTe) comprising an interfacial region, and (b) subjecting the CdTe to a functionalizing treatment to obtain p-type doped CdTe, said functionalizing treatment comprising a thermal treatment of at least a portion of the interfacial region in the presence of a first material comprising a p-type dopant, and of a second material comprising a halogen. A method of making a photovoltaic cell is also disclosed.

主权项

1. A method of p-type doping cadmium telluride (CdTe), said method comprising the steps of:
(a) providing a first component comprising cadmium telluride (CdTe) comprising an interfacial region; and (b) subjecting the CdTe to a functionalizing treatment to obtain p-type doped CdTe, said functionalizing treatment comprising a thermal treatment of at least a portion of the interfacial region in the presence of (1) a first material comprising a p-type dopant compromising bismuth, phosphorous, arsenic, or antimony, (2) second material comprising a halogen, and (3) at least one of EDA, a dilute solution of bromine in mthanol, or a mixture of nitric acid and phosphoric acid.