发明名称 SEMICONDUCTOR MATERIAL, TRANSISTOR INCLUDING SEMICONDUCTOR MATERIAL AND ELECTRONIC DEVICE INCLUDING TRANSISTOR
摘要 <p>A semiconductor material, a transistor including semiconductor material, and an electronic device including a transistor are provided. The disclosed semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may further include a compound, such as, zinc fluorooxynitride, zinc oxynitride containing fluorine, and zinc fluoronitride. The semiconductor material can be used for the channel material of a thin film transistor.</p>
申请公布号 KR20140070344(A) 申请公布日期 2014.06.10
申请号 KR20130097345 申请日期 2013.08.16
申请人 SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG DISPLAY CO., LTD. 发明人 KIM, TAE SANG;KIM, SUN JAE;KIM, HYUN SUK;RYU, MYUNG KWAN;PARK, JOON SEOK;SEO, SEOK JUN;SEON, JONG BAEK;SON, KYOUNG SEOK
分类号 H01L29/786;H01L21/336 主分类号 H01L29/786
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