发明名称 |
SEMICONDUCTOR MATERIAL, TRANSISTOR INCLUDING SEMICONDUCTOR MATERIAL AND ELECTRONIC DEVICE INCLUDING TRANSISTOR |
摘要 |
<p>A semiconductor material, a transistor including semiconductor material, and an electronic device including a transistor are provided. The disclosed semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may further include a compound, such as, zinc fluorooxynitride, zinc oxynitride containing fluorine, and zinc fluoronitride. The semiconductor material can be used for the channel material of a thin film transistor.</p> |
申请公布号 |
KR20140070344(A) |
申请公布日期 |
2014.06.10 |
申请号 |
KR20130097345 |
申请日期 |
2013.08.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG DISPLAY CO., LTD. |
发明人 |
KIM, TAE SANG;KIM, SUN JAE;KIM, HYUN SUK;RYU, MYUNG KWAN;PARK, JOON SEOK;SEO, SEOK JUN;SEON, JONG BAEK;SON, KYOUNG SEOK |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|