| 摘要 |
The present invention, in a plasma etching method for plasma etching using an EUV exposed resist, provides a plasma etching method which can prevent the non-uniformity of process dimension. The present invention, in a plasma etching method for plasma-etching an object by using as a mask a multilayer resist which has an EUV exposed resist, an anti-reflection layer, an inorganic layer, and an organic layer, includes a first process which deposits a deposition layer on the surface of the resist before the anti-reflection layer is etched, a second process which etches the anti-reflection layer and the deposition layer deposited on the anti-reflection layer by using a mixture gas of Cl2 gas, HBr gas, and N2 gas after the first process, a third process which etches the inorganic layer after the second process, and a forth process which etches the organic layer after the third process. |
