发明名称 Semiconductor device including transistors
摘要 A first capacitor obtains a gate-source voltage of a first transistor in accordance with a programming current flowing through the first transistor, and a second capacitor obtains a threshold voltage of a second transistor. Then, the electric charges held in the first capacitor and the second capacitor are capacitively coupled. By using the voltage obtained with the capacitively coupling as a gate-source voltage of the first transistor, constant current in accordance with the programming current can be supplied to a light emitting element.
申请公布号 US8749453(B2) 申请公布日期 2014.06.10
申请号 US201113118640 申请日期 2011.05.31
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Umezaki Atsushi
分类号 G09G3/30 主分类号 G09G3/30
代理机构 代理人
主权项 1. A semiconductor device comprising: a first transistor comprising a gate and a first terminal; a second transistor comprising a gate and a first terminal; a third transistor comprising a first terminal and a second terminal; a fourth transistor comprising a first terminal and a second terminal; and a light emitting element comprising a pixel electrode and a light emitting layer, wherein the gate of the second transistor and the first terminal of the second transistor are electrically connected to each other, wherein the gate of the first transistor and the first terminal of the third transistor are directly connected to each other, wherein the gate of the second transistor and the second terminal of the third transistor are directly connected to each other, wherein the gate of the first transistor and the first terminal of the fourth transistor are directly connected to each other, wherein the first terminal of the first transistor and the second terminal of the fourth transistor are directly connected to each other, and wherein the first terminal of the first transistor is electrically connected to the pixel electrode of the light emitting element.
地址 Atsugi-shi, Kanagawa-ken JP
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