发明名称 ATOMMIC LAYER DEPOSITION APPARATUS
摘要 <p>The present invention relates to a batch type large area atomic layer deposition apparatus which is capable of carrying out atomic layer deposition process for multiple large area glass substrates, the batch type large area atomic layer deposition apparatus comprising a vacuum chamber which is able to form vacuum inside; a gate valve which is formed at the left hand side and at the right hand side of the vacuum chamber; a process gas supply unit which is installed at the upper part of the vacuum chamber and which ejects process gas from the upper part of the vacuum chamber toward the lower part of the vacuum chamber to produce a laminar flow; a gas suction and discharge unit which is installed in the lower part of the vacuum chamber and which sucks and discharges the process gas in the vacuum chamber; a cassette where many substrates are mounted vertically and which is placed between the process gas supply unit and the gas suction and discharge unit to form an inner chamber for an atomic layer deposition process; and a cassette tight contacting unit which is installed at the upper part of the gas suction and discharge unit inside the vacuum chamber to make the cassette closely contact the process gas supply unit by raising the cassette entering the vacuum chamber.</p>
申请公布号 KR20140069715(A) 申请公布日期 2014.06.10
申请号 KR20120137349 申请日期 2012.11.29
申请人 NCD CO. 发明人 SHIN, WOONG CHUL;CHOI, KYU JEONG;BAEK, MIN;SEONG, NAK JIN
分类号 C23C16/448;C23C16/455 主分类号 C23C16/448
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