HETERO JUNCTION FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an art which can inhibit damages on a semiconductor substrate surface in a manufacturing process of a hetero junction field effect transistor.SOLUTION: A manufacturing method of a hetero junction field effect transistor comprises: a process of forming a dielectric film 4 on a source electrode 2a, a drain electrode 2b, a semiconductor substrate 1 and a gate electrode body 3; a process of removing the dielectric film 4 on the gate electrode body 3; and a process of forming a field relaxation electrode 5 which projects laterally from a first gate electrode 3a on the dielectric film 4 around the first gate electrode 3a.