发明名称 IMAGE-SENSING METHOD HAVING A VERY SHORT INTEGRATION TIME
摘要 The invention relates to image sensors, and, more particularly, to matrix sensors having CMOS active pixels. The invention relates to a method for shooting a scene with a very short integration time, using a standard image sensor comprising a pixel matrix having photodiodes and nodes for storing charges. Two images of a same scene are produced in identical lighting conditions, one of the images corresponding to a charge integration during a first time interval having a duration Tint and the other image corresponding to a second time interval having a duration T'int larger than Tint, and a difference is established between said two images, representing an image integrated during a time interval T'int - Tint. The light can be provided by a light pulse (IMP). Said method is applicable for observing the points of a scene, located at determined distance, the shortness of the integration time providing good precision of the observation distance.
申请公布号 WO2014082827(A1) 申请公布日期 2014.06.05
申请号 WO2013EP73196 申请日期 2013.11.06
申请人 E2V SEMICONDUCTORS 发明人 LIGOZAT, THIERRY;DIASPARRA, BRUNO
分类号 H04N5/222;H04N5/353 主分类号 H04N5/222
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