DIE HAVING THROUGH-SUBSTRATE VIAS WITH DEFORMATION PROTECTED TIPS

摘要

A through-substrate via (TSV) die includes a substrate with a top side semiconductor surface having active circuitry therein including a plurality of transistors functionally connected and a bottom side surface. A plurality of TSVs extend from the top side semiconductor surface to TSV tips which protrude from the bottom side surface and include an inner metal core of electrically conductive filler material surrounded by a dielectric liner that forms an outer edge for the TSVs. A tip deformation protecting layer of inorganic dielectric material is on the bottom side surface lateral to the TSV tips. An elastic modulus of the inorganic dielectric material is greater than (>) an elastic modulus of the electrically conductive filler material. A second dielectric layer including a polymer is on the tip deformation protecting layer.

主权项

1. A through-substrate via (TSV) die, comprising:
a substrate having a top side semiconductor surface having active circuitry therein including a plurality of transistors functionally connected and a bottom side surface; a plurality of TSVs which extend from said top side semiconductor surface to TSV tips which protrude from said bottom side surface and comprise an inner metal core comprising an electrically conductive filler material surrounded by a dielectric liner that forms an outer edge for said plurality of TSVs; a tip deformation protecting layer comprising an inorganic dielectric material on said bottom side surface lateral to said TSV tips, wherein an elastic modulus of said inorganic dielectric material is greater than (>) an elastic modulus of said electrically conductive filler material, and a second dielectric layer comprising a polymer on said tip deformation protecting layer.