Provided is a planarization processing method. The method comprises: forming a groove G in an area of the material layer having high load-bearing conditions for sputtering; and sputtering the material layer, so as to make the material layer flat.
申请公布号
WO2014082356(A1)
申请公布日期
2014.06.05
申请号
WO2012CN87003
申请日期
2012.12.20
申请人
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES
