| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment method of silicon wafer capable of suppressing occurrence of slip dislocation, by enhancing the strength at a specific position of an edge.SOLUTION: In a method of heat treating a silicon wafer by placing the silicon wafer in a quartz chamber, and heating both principal surfaces of the silicon wafer by means of a heating lamp for principal surface, at the same time of heating both principal surfaces of the silicon wafer by means of the heating lamp for principal surface, a specific position at an edge of the silicon wafer is heated from the side face direction of the silicon wafer by means of the heating lamp for edge. |
