| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing occurrence of coverage failure in a film (a hydrogen barrier film and barrier metal) on an electrode when the film is formed on the electrode, and to provide a method of manufacturing the same.SOLUTION: In a semiconductor device 1, an upper electrode 14 having a laminated structure of an electrode lower layer 15 contacting with a ferroelectric film 13 and an electrode upper layer 16 laminated on the electrode lower layer 15 is laminated on the ferroelectric film 13. A top surface of the electrode upper layer 16 is a flat surface having no relation with surface morphology of the ferroelectric film 13 by flattening. Accordingly, a hydrogen barrier film 17 and a barrier metal 28 can be formed to have substantially the same thickness on the electrode upper layer 16, and occurrence of coverage failure in a film on the upper electrode 14 can be prevented. |
