| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which inhibits cracking in a semiconductor layer.SOLUTION: A semiconductor light-emitting element manufacturing method of the present embodiment comprises: a coating film formation process of forming a mask which coats a partial region on a laminated semiconductor layer including a luminescent layer emitting light by energization and composed of a group III nitride and which is composed of a material different from a material of the laminated semiconductor layer on a semiconductor multilayered substrate in which the laminated semiconductor layer is laminated on a substrate; a surface laser process of locally removing the laminated semiconductor layer from the side where the mask is formed so as to reach the substrate thereby to form a first irradiation line and a second irradiation line which cross on the mask and divide the laminated semiconductor layer in a plurality of regions on the semiconductor multilayered substrate where the mask is formed; and a wet etching process of performing wet etching on the semiconductor multilayer substrate on which the mask, the first irradiation line and the second irradiation line are formed. |
