| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device achieving low contact resistance and high mobility. SOLUTION: A semiconductor device comprises a field-effect transistor including: a gate electrode 13; a gate insulation layer 14; a channel formation region 16 consisting of an organic semiconductor material layer; and a source/drain electrode 15 consisting of metal. In the semiconductor device, a portion of the source/drain electrode 15 coming into contact with the organic semiconductor material layer constituting the channel formation region 16 is coated with electrode coating material 21. The electrode coating material 21 comprises an organic molecule having a functional group that can be bonded with metal ions and a functional group bonded with the source/drain electrode 15 consisting of metal. COPYRIGHT: (C)2013,JPO&INPIT |
