发明名称 |
Error correcting codes for increased storage capacity in multilevel memory devices |
摘要 |
Embodiments of the present disclosure provide methods, systems, and apparatuses related to multilevel encoding with error correction. In some embodiments, data may be programmed and/or read from a matrix of nonvolatile memory cells with concatenated encoding/decoding schemes. In some embodiments, a calculation module may determine an actual bit per cell value of a given combination of parameters of a nonvolatile memory device. Still other embodiments may be described and claimed. |
申请公布号 |
US8745463(B2) |
申请公布日期 |
2014.06.03 |
申请号 |
US201213712880 |
申请日期 |
2012.12.12 |
申请人 |
Micron Technology, Inc. |
发明人 |
Amato Paolo;Campardo Giovanni |
分类号 |
H03M13/00 |
主分类号 |
H03M13/00 |
代理机构 |
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代理人 |
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主权项 |
1. An apparatus comprising:
a matrix of memory cells; and a calculation system configured to select an error correction code scheme based at least in part on a first number of non-parity information bits that the matrix is capable of storing, a second number of parity cells of the matrix, and a third number of non-parity cells of the matrix.
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地址 |
Boise ID US |