发明名称 Error correcting codes for increased storage capacity in multilevel memory devices
摘要 Embodiments of the present disclosure provide methods, systems, and apparatuses related to multilevel encoding with error correction. In some embodiments, data may be programmed and/or read from a matrix of nonvolatile memory cells with concatenated encoding/decoding schemes. In some embodiments, a calculation module may determine an actual bit per cell value of a given combination of parameters of a nonvolatile memory device. Still other embodiments may be described and claimed.
申请公布号 US8745463(B2) 申请公布日期 2014.06.03
申请号 US201213712880 申请日期 2012.12.12
申请人 Micron Technology, Inc. 发明人 Amato Paolo;Campardo Giovanni
分类号 H03M13/00 主分类号 H03M13/00
代理机构 代理人
主权项 1. An apparatus comprising: a matrix of memory cells; and a calculation system configured to select an error correction code scheme based at least in part on a first number of non-parity information bits that the matrix is capable of storing, a second number of parity cells of the matrix, and a third number of non-parity cells of the matrix.
地址 Boise ID US