发明名称 |
Methods relating to intermetallic testing of bond integrity between bond pads and copper-containing bond wires |
摘要 |
Methods relating to intermetallic compound testing of copper-based wire bonds are provided. For example, a method is generally provided for testing the integrity of wire bonds formed between copper-containing wires and the bond pads of a plurality of microelectronic devices. In one embodiment, the method includes selecting at least one wire bond sample produced in conjunction with the wire bonds formed between the copper-containing wires and the bond pads of the microelectronic devices. One or more copper-containing wires of the wire bond sample are contacted with a liquid copper etchant, which contains a sulfate-based oxidizing agent dissolved in a solvent, to cause separation of the copper-containing wires from the bond pads and exposure of the underlying wire-pad interfaces. Intermetallic compounds formed at the exposed wire-pad interfaces are then measured to assess the integrity of the wire bonds. |
申请公布号 |
US8741666(B1) |
申请公布日期 |
2014.06.03 |
申请号 |
US201313766445 |
申请日期 |
2013.02.13 |
申请人 |
Freescale Semiconductor, Inc. |
发明人 |
Yap Weng F;Law Lai Cheng;Wong Boh Kid |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method for testing the integrity of wire bonds formed between copper-containing wires and the bond pads of a plurality of microelectronic devices, the bond pads of the plurality of microelectronic devices fabricated from a metallic material different than the copper-containing wires, the method comprising:
selecting at least one wire bond sample produced in conjunction with the wire bonds formed between the copper-containing wires and the bond pads of the plurality of microelectronic devices; contacting one or more copper-containing wires of the wire bond sample with a liquid copper etchant to cause separation of the copper-containing wires from the bond pads and exposure of the underlying wire-pad interfaces, the liquid copper etchant comprising a sulfate-based oxidizing agent dissolved in a solvent; and measuring the formation of intermetallic compounds at the exposed wire-pad interfaces to assess the integrity of the wire bonds formed between the copper-containing and the bond pads of the plurality of microelectronic devices.
|
地址 |
Austin TX US |