发明名称 Methods relating to intermetallic testing of bond integrity between bond pads and copper-containing bond wires
摘要 Methods relating to intermetallic compound testing of copper-based wire bonds are provided. For example, a method is generally provided for testing the integrity of wire bonds formed between copper-containing wires and the bond pads of a plurality of microelectronic devices. In one embodiment, the method includes selecting at least one wire bond sample produced in conjunction with the wire bonds formed between the copper-containing wires and the bond pads of the microelectronic devices. One or more copper-containing wires of the wire bond sample are contacted with a liquid copper etchant, which contains a sulfate-based oxidizing agent dissolved in a solvent, to cause separation of the copper-containing wires from the bond pads and exposure of the underlying wire-pad interfaces. Intermetallic compounds formed at the exposed wire-pad interfaces are then measured to assess the integrity of the wire bonds.
申请公布号 US8741666(B1) 申请公布日期 2014.06.03
申请号 US201313766445 申请日期 2013.02.13
申请人 Freescale Semiconductor, Inc. 发明人 Yap Weng F;Law Lai Cheng;Wong Boh Kid
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项 1. A method for testing the integrity of wire bonds formed between copper-containing wires and the bond pads of a plurality of microelectronic devices, the bond pads of the plurality of microelectronic devices fabricated from a metallic material different than the copper-containing wires, the method comprising: selecting at least one wire bond sample produced in conjunction with the wire bonds formed between the copper-containing wires and the bond pads of the plurality of microelectronic devices; contacting one or more copper-containing wires of the wire bond sample with a liquid copper etchant to cause separation of the copper-containing wires from the bond pads and exposure of the underlying wire-pad interfaces, the liquid copper etchant comprising a sulfate-based oxidizing agent dissolved in a solvent; and measuring the formation of intermetallic compounds at the exposed wire-pad interfaces to assess the integrity of the wire bonds formed between the copper-containing and the bond pads of the plurality of microelectronic devices.
地址 Austin TX US