发明名称 MEMORY INSTRUCTION INCLUDING PARAMETER TO AFFECT OPERATING CONDITION OF MEMORY
摘要 <p>The present invention relates to a memory instruction including parameter to affect the operating condition of a memory. The memory instruction including parameter to affect the operating condition of a memory according to one embodiment of the present invention includes a step of receiving a memory instruction; and a step of affecting the physical operating condition of a peripheral circuit. According to one embodiment of the present invention, the memory instruction further includes a step of converting a digital signal into an analog signal.</p>
申请公布号 KR20140066988(A) 申请公布日期 2014.06.03
申请号 KR20140060276 申请日期 2014.05.20
申请人 MICRON TECHNOLOGY, INC. 发明人 PIO FEDERICO
分类号 G11C7/10;G11C5/14 主分类号 G11C7/10
代理机构 代理人
主权项
地址
您可能感兴趣的专利