| 摘要 |
Disclosed is a method for treating a substrate. The method comprises providing a substrate where a first thin film and a second thin film are formed; forming an etch byproduct on the upper surface of the first thin film by supplying an upper flow etch gas onto the substrate; etching the first thin film by performing a thermal process on the substrate and removing the etch byproduct; and selectively removing one of the first thin film and the second thin film by supplying a lower flow etch gas onto the substrate. [Reference numerals] (AA) Start; (BB) End; (S10) Providing a substrate where a first thin film and a second thin film are formed; (S20) Forming an etch byproduct on the upper surface of the first thin film by supplying an upper flow etch gas onto the substrate; (S30) Removing the etch byproduct by performing a thermal process on the substrate; (S40) Selectively removing one of the first thin film and the second thin film by supplying a lower flow etch gas onto the substrate |
