METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND RECORDING MEDIUM

摘要

The present invention has a step for forming a film on a substrate by performing a prescribed number of cycles comprising: a step for feeding a raw material gas to a substrate inside a processing chamber; a step for exhausting raw material gas remaining inside the processing chamber; a step for feeding a reaction gas to the substrate inside the processing chamber; and a step for exhausting reaction gas remaining inside the processing chamber. In the step for feeding the raw material gas, the raw material gas is fed into the processing chamber in a state in which the exhausting inside the processing chamber has essentially stopped, and then, in a state in which exhausting inside the processing chamber and feeding of raw material gas have essentially stopped, an inert gas is fed inside the processing chamber.