发明名称 |
METHOD OF FORMING SEMICONDUCTOR FINS |
摘要 |
An improved method of forming semiconductor fins is disclosed. Cavities are formed by etching a semiconductor substrate to a first depth. A surface treatment layer such as a nitride layer is then deposited or formed on the interior surface of the cavities. The etch then continues deeper, while the surface treatment layer protects the upper portion of the cavities. |
申请公布号 |
US2014148011(A1) |
申请公布日期 |
2014.05.29 |
申请号 |
US201213688258 |
申请日期 |
2012.11.29 |
申请人 |
GLOBALFOUNDRIES INC.;GLOBALFOUNDRIES INC. |
发明人 |
CHOI DAE-HAN;YANG DAE GEUN;MAENG CHANG HO |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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